Resistance Furnace SRCG8-M07

Product

Function

Parallel

Resistance Furnace SRCG8-M07

The resistance thermal field platform is currently the most advanced PVT crystal growth platform. Due to the effect of electromagnetic induction, the induction heating has a coupling phenomenon between the axial temperature and the radial temperature, and cannot take into account both the growth rate and the quality of the growth crystal. The resistive thermal field growth platform can precisely control the axial temperature and radial temperature respectively, which is beneficial to realize the growth of large-sized crystals and increase the growth rate of crystals. It is one of the solutions for the growth of high-quality 8-inch silicon carbide crystals in the future.

Our Products

Separate internal and external temperature measurement components

The entire crystal growth cycle adopts temperature closed-loop control
Internal and external separation, greatly improving the anti-interference of temperature measurement

Multi-zone temperature control design

Reduce defects caused by thermal stress
More flexible temperature gradient adjustment
Separate control of the source material temperature area and the seed crystal temperature area

Our Innovation

Axial and Radial Temp Control Separate

Note: A single furnace type does not necessarily involve all technologies, it is for reference only, please call HIPER for details

[Axis-diameter separation] The technology is applied to the resistive crystal growth furnace to completely solve the temperature coupling phenomenon in the direction of the shaft-diameter. Adjust the axial temperature gradient to increase the crystal growth rate, and the radial temperature gradient will also change accordingly, resulting in unevenness of the crystal growth interface, increased stress, and increased crystal defects. The resistance type crystal growth furnace can control the temperature of the seed crystal area and the source material area separately through the resistance heating in different areas, and achieve the separation of the axial temperature gradient and the radial temperature gradient, thereby stabilizing the crystal growth surface shape and greatly improving the crystal growth rate. Growth rate.

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